| 摘要 |
PURPOSE:To obtain an electrode for a semiconductor device which is not broken by a thermal shock by forming an opening whose side wall has inclination in the surface-protecting insulative film provided on a semiconductor substrate and attaching an electrode in the opening so as not to extend over the insulative film, when forming an electrode on a semiconductor device. CONSTITUTION:The Si substrate 1 formed with a p-n junction is coated with a surface-protecting SiO2 film 3, which is etched by using a mask of photoresist film 5 to form an opening in a given region. In this case, as an etching liquid, a mixture of HF and NH4F of ratio 1:6 is used and heated to 40 deg.C in order to make the side wall of the opening have an inclination of 38.7 degrees, or at 20 deg.C an inclination of approximately 20 degrees is made to form. Then, with the film 5 left as it is, the whole surface is coated with an electrode 4 of a multilayer film such as Ti-Pd-Au or a single-layer film of Al, Au or the like, and the film 5 is removed together with the electrode film provided thereon. Thereby, the adhesive force of the electrode 4 is increased so that peedling or the like never occurs. |
