| 摘要 |
PURPOSE:To prevent the destruction of the SiO2 film in a semiconductor device due to shock in wire bonding and obtain a bonding pad having a small parasitic capacity by successively placing a plurality of sets of combination of a conductive layer and an SiO2 layer between the insulating film on the semiconductor substrate surface and the metal film on which wire bonding is performed. CONSTITUTION:On the SiO2 film 2 on a substrate 1, a polycrystalline Si conductive layer 5 is provided and oxidized at high temperature so as to be coated with SiO2 6. Moreover, a polycrystalline Si conductive layer 7 is piled thereon and coated with SiO2 8, then a metal 3a is piled thereon and providied with a protective film. By said constitution, when wire bonding is performed on the metal 3a, the shock to the SiO2 film 2 is reduced because it is absorbed and dispersed by the conductive layers 6 and 7. Accordingly, if thin, the SiO2 film 2 is not destroyed. Also, instead of polycrystalline Si, a metal having high melting point such as Mo or molybdenum silicide and an insulator can be used. Moreover, by said constitution, because the insulating layers 6 and 8 are placed between the substrate 1 and the metal layer 3a, the parasitic capacity decreases. |
