| 摘要 |
PURPOSE:To obtain a plastic molded type semiconductor device having remarkably improved heat radiating characteristics by cooling the sealing resin directly. CONSTITUTION:To both ends of a metal 11, an N type and P type semiconductors 12 and 13 are bonded respectively. Moreover, metals 14 and 15 are bonded to the semiconductors 12 and 13 respectively, and the positive electrode of a DC power source is connected to the metal 14 and the negative electrode to the metal 15. By energizing, an endothermic reaction takes place at each of the junctions 17 and 19 between the semiconductors 12 and 13 and the metal 11, and an exothermic reaction takes place at each of the junctions between the semiconductors 12 and 13 and the metals 14 and 15 respectively. Consequently, the temperature of the metal 11 lowers while those of the metals 14 and 15 rise. Accordingly, the temperature of the resin 21 can be lowered, and the generated heat can be extermely efficiently radiated during the operation of the semiconductor device. |
