| 摘要 |
PURPOSE:To minimize surface leakage current and thus to minimize counter current by a method wherein an electrode layer is formed on the main surface of a substrate through an insulating layer, which works on electric field. CONSTITUTION:An N type domain 3 is provided from the main surface of a P type semiconductor substrate 1 to form a P-N junction 4, or a metallic layer is provided to form a Schottky junction. Next, electrodes 7, 9 are formed, and then an electrode layer 20 is formed on a main surface 2 through an insulating film 5 of SiO2. By giving a negative bias voltage to the electrode layer 20 of the semiconductor diode to work on electric field, a carrier in a domain including a depletion layer 12 under the electrode layer is pushed out into the substrate 1. A surface leakage current is minimized thereby and a counter current is thus minimized consequently. |
