| 摘要 |
PURPOSE:To make faster the operating speed of memory device, by decreasing the potential difference of two output lines of the sense circuit at write-in through the use of a transistor. CONSTITUTION:A transistor Q15 is connected to two output lines RB and -RB of the voltage sense circuit, and a signal W0 which is controlled with a signal turning on Q15 at high level at write-in and turning off at low level at readout, is fed to the gate. At write-in, the write-in circuit 10 gives the complement data to the write-in base WB, -WB according to the signal W0 based on the input Din. On the other hand, the level difference of output lines RB and -RB is decreased than the level difference at readout with Q15 turned on with the signal W0. Thus, when control is moved from the write-in readout, the time t0 required to invert RB, -RB is rather faster than the case when the previous cycle is the readout cycle. |
