发明名称 |
Semiconductor device having a protective layer, and method for producing it. |
摘要 |
A semiconductor device having a protective polyimide film layer for preventing alpha -rays from intruding into the device is provided. The polyimide film layer has incorporated therein a salient amount of finely divided filler particles, and is formed on the surface of at least a region wherein the semiconductor element is formed. The polyimide film layer is formed by coating the semiconductor substrate with a liquid polyimide or polyamic acid composition having incorporated therein the finely divided filler particles, according to a screen printing method. |
申请公布号 |
EP0034455(A2) |
申请公布日期 |
1981.08.26 |
申请号 |
EP19810300530 |
申请日期 |
1981.02.10 |
申请人 |
FUJITSU LIMITED |
发明人 |
ABIRU, AKIRA;SUGIMOTO, MASAHIRO;INOMATA, JURO |
分类号 |
H01L21/312;H01L23/29;H01L23/31;H01L23/556 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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