| 摘要 |
PURPOSE:To secure a passivation function on both ends and thus to increase a radiant power by a method wherein a reflection preventive film is fixed on a radiant power extracting end, and a reflection increasing film is fixed on an end opposite thereto. CONSTITUTION:A reflection preventive film is fixed on a radiant power extracting end, and a reflection increasing film is fixed on an end opposite thereto. For example, N type GaAlAs layers 12, 13, P type GaAlAs layers 14, 15, 16 and P type GaAs layer 17 are formed on an N type GaAs substrate 11. The first electrode 18 and the second electrode 19 are formed further thereon, and the reflection preventive film 21 is formed on the radiant power extracting end 20 with a single layer film of at least one kind of Al2O3, Si3N4, SiO2 to satisfy n1d1=lambda/4. The reflection increasing film 23 is formed on an end 22 opposite thereto with a single layer film of germanium satisfying n2d2=lambda/2, and thus passivation function is secured and radiant power can be increased. |
