| 摘要 |
PURPOSE:To form a crystal growing layer with a uniform distribution of concentration of impurities on a base plate by a method wherein a layer of crystal with nonimpurities and a layer of impurities are alternatively formed on the base plate, then heated. CONSTITUTION:Cell 11 containing Ga and cell 12 containing As are oppositely arranged on the GaAs base plate 17 of a growing base plate and then epitaxial layer of GaAs having the shutters 14 and 15 opened is grown up to about 200Angstrom . Then, the base plate 17 is moved to a position corresponding to the cell 13 containing the added impurities, the shutter 16 is opened and tin impurities layer is grown on the base plate 17 up to a 1-10Angstrom . Alternative operation of this growing process is applied to form a piled crystal layer having a desired thickness, then a heating operation is applied. Then, a uniform crystal growing layer having less concentration of impurities may be provided. |
