| 摘要 |
PURPOSE:To obtain a highly accurate submicron stroke width by a method wherein the first photoresist pattern is formed at equal intervals and then the second photoresist pattern desired is formed on the first pattern before being etched and both the photoresist are removed. CONSTITUTION:In the method for the formation of a pattern to provide a stroke width for a submicron region on a semiconductor element, a semiconductor substrate 1 is coated with photoresist 3 for electron beams and a pattern drawn at equal intervals is exposed to the electron beams 4 before being developed to form an opening 10. The surface produced is covered with photoresist 11 and exposed to light according to the pattern desired. The photoresist 11 is developed to form the opening 13 desired. With the electron beam photoresist 3 and the photoresist 11 as a mask, the photoresist surface is etched to form concave portions 14, 15 on the substrate 1 and then the electron beam photoresist 3 and the photoresist 11 are removed. By so doing, it is made possible to form a pattern with a highly accurate stroke width against various design patterns. |
