发明名称 Device for growing a crystalline layer on a substrate
摘要 A magnetic epitaxial layer containing the rare earths yttrium and samarium is grown on a gadolinium-gallium substrate which moves vertically in the melt during the growth process. The substrate remains immersed in a melt containing oxides of iron and the rare earths and while moving vertically in its own plane the substrate effectuates a translation movement with each point of the substrate describing a canted 8-shaped loop.
申请公布号 US4285911(A) 申请公布日期 1981.08.25
申请号 US19800159535 申请日期 1980.06.16
申请人 INTERNATIONAL STANDARD ELECTRIC CORPORATION 发明人 DE BROUCKERE, LUCIEN C.
分类号 C30B19/06;C30B19/10;C30B19/12;(IPC1-7):C30B15/30;C30B35/00 主分类号 C30B19/06
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