发明名称 |
Device for growing a crystalline layer on a substrate |
摘要 |
A magnetic epitaxial layer containing the rare earths yttrium and samarium is grown on a gadolinium-gallium substrate which moves vertically in the melt during the growth process. The substrate remains immersed in a melt containing oxides of iron and the rare earths and while moving vertically in its own plane the substrate effectuates a translation movement with each point of the substrate describing a canted 8-shaped loop.
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申请公布号 |
US4285911(A) |
申请公布日期 |
1981.08.25 |
申请号 |
US19800159535 |
申请日期 |
1980.06.16 |
申请人 |
INTERNATIONAL STANDARD ELECTRIC CORPORATION |
发明人 |
DE BROUCKERE, LUCIEN C. |
分类号 |
C30B19/06;C30B19/10;C30B19/12;(IPC1-7):C30B15/30;C30B35/00 |
主分类号 |
C30B19/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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