| 摘要 |
Improved semiconductor device with stabilized surface is disclosed. The semiconductor device has a semi-insulated film(8) which is formed between the silicon dioxide film(7) and the insulated film(9). The thickness of the silicon dioxide film formed on the semiconductor surface is about 5∦ - 25∦, and the surface resistance of the seminsulated film(8) formed on the silicon dioxide film is about 1011Ω/A - 5 x 1014Ω/A. The impurity concentration of the semiconductor layer(14) is predetermined to about 1015/cm3, and the high concentration region(16) is predetermined to about 1020/cm3, so that L-H junction having built-in potential barrier of about 0.2 eV is formed.
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