| 摘要 |
PURPOSE:To enable to obtain the crystal growth film having a superior crystallinity and uniform thickness by a method wherein the liquid phase epitaxial growth is performed in the condition applying a magnetic field to the epitaxial liquid. CONSTITUTION:When the dipping method is to be performed, the magnetic field generated by a magnetic field generating means 7 is applied to the liquid 1 to form the crystal growth film, and a substrate 4 to be made the growth is dept in the liquid in this condition to perform the epitaxial growth. When the magnetic field is applied like this to the liquid 1 on the occasion of the liquid phase epitaxial growth, the apparent viscosity of the liquid 1 is elevated and the convection of the liquid 1 is suppressed. Accordingly the crystal growth film having the superior crystallinity and uniform thickness, being avoided to be mixed with a needless impurity and having a good quality, can be made to grow on the substrate 4 even by the dipping method. The same effect can be also obtained when the liquid phase epitaxial growth is to be performed by the sliding method and the spin method. |
