| 摘要 |
PURPOSE:To prevent the exposure of PSG and to attempt the elevation of dampproof ability of the semiconductor device by a method wherein a large opening is formed in PSP on a dampproof film of SiO2, etc., and a small opening is formed in an Si3N4 film covering the opening. CONSTITUTION:An Si substrate 1 having a field oxide film 2, a gate oxide film 3, a polycrystalline Si gate electrode 4 and diffusion layers 5 is covered with the PSG6. After openings are formed selectively to provide interconnections 7, they are covered with an Si3N4 8. Openings A, B are formed selectively in the film 8, and the metallic interconnection outgoing port B is made to be smaller than the opening A. By this constitution, the PSG is perfectly protected by Si3N4 and is not exposed, and the dampproof ability is elevated. |
