发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent inversion of a burried SiO2 and an Si substrate interface by restraining segregation of B by a method wherein an acid resistive thin film is formed on the bottom surface of the burried SiO2 separating layer on the Si substrate. CONSTITUTION:An epitaxial layer 23 is formed on the P type Si substrate 21 on which an N layer 22 selectively is mounted. Burried SiO2 24-24'' approximately equivalent to the layer 23 in thickness are provided, the epiraxial layer is separated and circuit elements 25, 25' are formed. Si3N4 layers 27-27'' are formed on the bottom surface of the SiO2 24-24'' to prevent to SiO2 from being grown and at the same time, to restrain the segregation of B at heat treating and to prevent the surface of P type Si substrate from being inverted to an N type. Accordingly, a phenomenon in which separated islands are electrically connected with each other will not occur nor the circuit function is broken.
申请公布号 JPS56105650(A) 申请公布日期 1981.08.22
申请号 JP19800008534 申请日期 1980.01.28
申请人 NIPPON ELECTRIC CO 发明人 AOMURA KUNIO
分类号 H01L21/76;H01L21/316;H01L21/331;H01L21/762;H01L29/73 主分类号 H01L21/76
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