发明名称 TARGET FOR MAGNETRON SPUTTERING
摘要 PURPOSE:To provide the long-life titled target capable of reducing local sputter evaporation phenomenon and of developing a uniform sputter evaporation by arranging a high magnetic permeable long strip in the direction crossing magnetic force line of perpendicular electromagnetic field, in sputter surface. CONSTITUTION:This target 11 is to generate crosswise magnetic force line in the gap between a magnet 23 and an ion piece 25 by providing a highly permeable long strip 31 on the rear surface of the target 11, in the direction at right angle to the magnetic force line. That is, the strip 31 devides the magnetic force line on the target 11 in the direction at right angle to the magnetic force line, as shown by marks 32. As a result, sputter evaporation area is extended from the area 33 to surface, thus increasing uniformness of evaporation in the target surface 11. At sputtering time, the temperature on the target surface often reaches to 200-300 deg.C or higher, so a ferromagnetic material is preferable as a strip 31. For example, preferable material is a single body of Ni, Co, Fe, etc. or Permalloy and Sendust.
申请公布号 JPS56105474(A) 申请公布日期 1981.08.21
申请号 JP19800006605 申请日期 1980.01.22
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 WASA KIYOTAKA;HAYAKAWA SHIGERU
分类号 C23C14/36;C23C14/35;H01J37/34 主分类号 C23C14/36
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