| 摘要 |
PURPOSE:To reduce the memory storage capacity of a defect register memory by corresponding the respective one bits of memory to predetermined switching blocks of the large-scale integrated circuit. CONSTITUTION:In the large-scale integrated circuit 7 in which basic elements 1-1- 1-4 and preliminary elements 1-5, 1-6 are connected through signal wire 2 to a signal terminal 3, a plurality of bits (indicated by lattice-shaped rectnagles) are formed in switching blocks, and defect information of the circuit 7 is stored in the defect register memory 4 formed by corresponding them to the respective one bits. An element 8 having a pair of the memory 4 and the circuit 7 is formed on a monocrystalline substrate. Thus, the storage capacity of the memory 4 can be reduced. Further, address conversion information is formed on the basis of the defect information to control the preliminary switching, thereby increasing the application to the system. |
