| 摘要 |
PURPOSE:To obtain a thin film transistor high in stability of its characteristics and in reproducibility of its structure, by using a passivation film made of transmissive materials to protect a transmissive silicon film and piling doped silicon film source/drain electrode layers which require high temperature on the passivation film. CONSTITUTION:A gate electrode 22, a gate insulating film 23, an amorphous silicon film 24, an SiN film 25 as a passivation film, and a photoresist 26 are formed on a glass substrate 21, and ultraviolet rays 27 are radiated on a rear side of the glass substrate. Thereupon the photoresist 26 is exposed with the gate electrode 22 being as a mask. Next this resist pattern is used as a mask to remove the passivation film 25 by etching. Next the resist pattern 28 is removed and a plasma CVD method is used to pile an amorphous silicon film 29 doped with phosphorus in high concentration, so that source/drain electrodes 30 and 31 are formed. |
