| 摘要 |
PURPOSE:To obtain the high withstand voltage characteristics of the semiconductor device by forming different conductivity type regions on both the front surface and the back surface of a high specific resistance substrate to thus form a P-N junction, and forming a mesa groove having a passivation layer terminating at the boundary between one conductivity type region and the substrate region. CONSTITUTION:An N type region 3 and a P type region 4 are selectively diffused by utilizing an oxide film on the back surface of the high specific resistance semiconductor substrate 1 to form the P-N junction 5 therebetween, an N<+> type collector region 6 and an N<+> type emitter region 7 are selectively diffused again, the mesa groove 8 is terminated at the boundary between the region 1 and the region 4, and glass or silicon rubber or the like 9 is filled therein. Thus, the semiconductor device having high withstand voltage and stable properties can be obtained. |
