| 摘要 |
PURPOSE:To obtain the high density high withstand voltage integrated circuit allowable for the displacement in production by forming thick and thin insulating films unnecessary for etching. CONSTITUTION:A plurality of monocrystalline semiconductor regions 3 enclosed at the bottom and side surfaces with oxide films 2 and supported by a polycrystalline semiconducdor 1 are formed, the main surface is oxidized, and then a polycrystalline semiconductor thin film 7 is locally formed on the surface of the oxide film 2. Then, it is again oxidized to form the oxide film at the film 7. Thereafter, a part of the surface of the oxide film is etched and removed to form holes 5, 5', and a circuit element is formed by impurity diffusion. Thus, wires 4, 4' are formed along the oxide film formed stepwisely by an evaporation technique. Thus, the stepwise difference of the insulating film can be reduced without etching the insulating film, and the disconnection of the wire can be prevented. Further, the surface oxide film of the p-n junction is reduced in thickness so as to enhance the field plate effect thereof. |
