| 摘要 |
PURPOSE:To improve the reliability of the semiconductor device by forming a plurality of small-window base regions passed from the emitter electrode to the base region on the surface at a part in the emitter region to equalize the resistance between the base and the emitter. CONSTITUTION:A p type base region 2 and an n<+> type emitter region 3 are formed on n<+> type and n<-> type collector regions 1. A plurality of small-window base regions 4a, 4b passed from the emitter electrode to the n type base region are formed on the surface at a part of the emitter region 3 as the resistor between the emitter and the base and operated as a diode. The small-window base regions can reduce the irregularity in the resistor between the emitter and the base and improves the reliability as the damper-built-in transistor. |
