| 摘要 |
PURPOSE:To improve the electric characteristics of the semiconductor device by forming grooves of specific width on a semiconductor substrate and an insulating layer formed thereon, filling surface stabilizing glass in the grooves to control the glass amount in the grooves and thus preventing the crack. CONSTITUTION:An insulating layer 10 is formed on the surface of the semiconductor substrate 11, the groove having a width W, which is less than 500mu, is formed on the layer, the groove 12 having a width X, which is 10-480mu, is formed on the semiconductor substrate, the surface stabilizing glass B having 0.417 of heat shrinkage rate as an example is so formed in the groove as to be higher than the surface of the layer by electrodeposition and burnt to be stabilized. Since sufficient amount of surface stabilizing glass can be thus filled in the grooves, no crack occurs, and the electric characteristics of the semiconductor device can be improved. |
