| 摘要 |
903,509. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Dec. 22, 1960 [Dec.31, 1959], No. 44025/60. Class 37. [Also in Group II] " Esaisi-" or " tunnel diodes " containing sharp PN junctions between heavily doped regions of P and N semi-conductivity and which exhibit quantum mechanical tunneling, are made by vapour deposition (see Group II). The manufacture of parts containing germanium doped with arsenic indium phosphorus or tin is mentioned. Two "Esalsi diodes" poled in opposite directions may also be made by this process (Fig. 3). |
