发明名称 SEMICONDUCTOR LIGHT EMISSION ELEMENT
摘要 PURPOSE:To obtain a high efficiency by effectively enclosing a carrier by a method wherein AlGaInAs is used as carrier enclosed layers arranged on one side or the both sides of a light emission region, in the light emission element with a hetero structure in which InGaAsP is made the light emission region. CONSTITUTION:An N<+> type InP buffer layer 12 of an Sn dope for eliminating an influence by an N<+> type InP substrate 11 is grown on the substrate 11, and an In1-xGaxAs1-uPu(0<=x<=1, 0<=u<=1) active layer 13 to be made the light emission region is grown laminated on the layer 12. At this time, the layer 13 is made P type as an impurity by using Zn, Cd and the like, or made N type with Sn, Te and like. Thereafter, the AlyGazIn1-y-zAs(0<=y<=1, 0<=z<=1, y+z<=1) carrier enclosed layer 14 which has been made P type by doping Zn or Cd is grown on the layer 13, a P-side electrode 15 surrounded by an SiO film 6 being fitted on the layer 14, the whole surface being cover-attached with an Au layer 17 and an N-side electrode 18 with an opening 19 is fitted on the substrate 11 side.
申请公布号 JPS56103485(A) 申请公布日期 1981.08.18
申请号 JP19800006016 申请日期 1980.01.22
申请人 FUJITSU LTD 发明人 YAMAGOSHI SHIGENOBU;NAKAJIMA KAZUO
分类号 H01L33/14;H01L33/30;H01L33/40;H01S5/00 主分类号 H01L33/14
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