| 摘要 |
PURPOSE:To enable clear evaluation of the dislocation density by etching a crystal of InGaAs with a mixture of NH4OH and H2O2. CONSTITUTION:In0.53 Ga0.47 As is laminated on the surface (100) of an InGa substrate and etched at a room temperature with the mixture of 30% NH4OH, 50% H2O2 and pure water at an equal capacity. When the surface of a wafer is observed with a microscope, an an etch pit is noted corresponding to the dislocation of a crystal. The capacity ratio can be changed within the mixing ratio range of NH4OH4: H2O2:H2O=1-3:1:0-3. But beyond this range, sufficient etch pit fails to be generated. This allows clear evaluation of the dislocation density thereby providing effective information for crystal growth and element production. |
