| 摘要 |
A large capacity random access memory (RAM) using a matrix of dynamic memory cells is designed with reduntant electrically programmed cells (EPROM), that may be substituted in the event of a malfunctioning dynamic cell. Typically, a 256x256 matrix of random access cells are arranged in two fields (10a,10b). A centre section contains 256 read amplifiers (11) and column decoders (14a,14b). Lines are addressed by decoding stages (12) associated with each memory field. The memory is addressed by multiplexed inputs (16) coupled to buffer stages for lines and columns (13,15). Each field contains a column of EPROM memory devices i.e 256 per field that are used in the event of a dynamic cell malfunction. |
