| 摘要 |
PURPOSE:To obtain a single crystal having a few defects in the semiconductor device with a substrate of crystalline insulating material, by crystallizing the noncrystalline semiconductor by the laser irradiation in the middle of the manufacturing process. CONSTITUTION:The noncrystalline semiconductor is deposited on the substrate of the insulating materials by sputtering and the like, and the laser beam having the wavelength of about 1-10mum or the electron beam is irradiated. The laser has uniform energy and can be focussed on the narrow region. In the case of an SOS structure, the light absorption is conducted in a specified region of an Si layer. Since the sapphire substrate is transparent with respect to the light having the wavelength of about 1mum and it is not heated, only the Si layer is selectively heated, the entire noncrystalline Si in a specified region is melted and recrystallized without thermochemical reaction of the substrate, and the single crystal having few defects is obained. The greater the density of the irradiated energy, the more effective is this tendency. The same method can be applied for the electron beam. |
