| 摘要 |
PURPOSE:To measure the distribution of the specific resistance by a resistance method by applying a specific heat treatment to a P type si crystal of 1-50OMEGAcm made by czochralski method. CONSTITUTION:The concentration of a P type dopant depends on the location. A heat treatment is applied to a CZSi crystal at 400-500 deg.C to convert O2 in the crystal to an electric thermal doner thereby compensating for the carrier. As the distribution of the specific resistance is in inverse proportion to the difference between the concentrations of the dopants, the measuring sensitivity can be increased thereby enabling measuring of evenness of the specific resistance up to a range previously impossible to do. |
