| 摘要 |
PURPOSE:To contrive a reduction of contact resistance by a method wherein Mo or W containing P or As or either Mo or W and a thin film of an alloy of Si are directly contacted on Si substrate to be made a gate electrode wiring. CONSTITUTION:A P type Si substrate 18 is mounted with a field film oxide 9, channel stopper 20, gate film oxide 21 and ion injection layer 22 for controlling a voltage at a threshold value thereon, and the film oxide 21 is perforated an opening 23. Then, a spattering is made using the gate of Mo in Ar containing PH3 and the gate electrode and wiring patterns 24b, 24a are manufactured with the Mo film containing P. Subsequently, As-ions are injected with those as a mask to form the N<+> layers 25a-25c. Those are annealed to make active and at the same time, P is diffused from the direct contact part of the Mo wiring to produce the N<+> layer 25d connected to the N<+> layer 25a. Hereafter, an inter-layer insulating film is formed to establish the wiring as usual. With this construction, the N<+> layer 25d at the direct connection part is easily obtained by means of a self-matching, alkali-ions can be fixed by using P and the device is also improved in reliability. |
