| 摘要 |
PURPOSE:To obtain the light receiving elements array extremely small in interferences between the elements by a method wherein P-N junctions made latticelike or meshlike are constructed on a semiconductor substrate, the P-N junctions being encircled by ordinary P-N junctions, electrodes being fixed at the latticelike junctions and the ordinary junctions being used for a photosensitive means. CONSTITUTION:An I type layer 2 is epitaxially grown on an N<+> type Si substrate 1 and covered with an SiO2 film 14 to be perforated an opening, and a circular N<+> type channel stopper region 4 is diffusion-formed inside the substrate 1 exposed. Circular P type guard ring regions 5 respectively are provided in both the inside and outside of the region 4, and P<+> type regions 6 respectively contacted with the internal regions 5 and the external regions 6 are diffusion-formed in those regions and respectively make the P-N junctions to be produced in cooperation with the layer 2. At this time, the internal regions 6 are made latticelike or meshlike and fitted at the ends with Al electrode 10 at which covered with the film 14, and an antihalation film 8 made of Si3N4 is cover-attached on the external regions 6 to permit lights to be incided to film 8. Thus, the array without the inter-element interference is obtained. |
