| 摘要 |
PURPOSE:To eliminate deflective layer, by plasma-etching the semiconductor material of Si and the like with a gas containing a halogen element, then by etching the material to the depth of more than about 200Angstrom with a gas containing Cl. CONSTITUTION:In the case a resist mask 3 is applied on SiO2 2 on an Si substrate 1 and the etching is performed by plasma of CF4+H2 gas, the unnecessary defective layer 5 is formed on the Si substrate. C, F, and/or polymerization film of C-F bonding are attached on the top surface, beta-SiC is sometimes formed in the lower layer, and the primary defects are yielded in the further lower layer. Then, CCl4 gas is introduced in a barrel type device and the pressure is made to be 0.6Torr. Thereafter, O2 is added, the flow rate is selected, and plasma is generated. Under this condition, the chemical etching is primarily performed. In the flow rate is nearly equal to 1, anisotropic etching is performed, tapered part 7 is formed, and the layer 5 is completely eliminated. However, the undercut is not generated, and breaking of the wire is not caused during the Al wiring. Since the high accelerating voltage is not applied, the defects due to new ion bombardment are not caused. |
