| 摘要 |
PURPOSE:To increase the current capacity of the semiconductor device by soldering a metal plate having a predetermined thickness and coated with a metal plating on the surface to at least one main electrode of a semiconductor pellet and bonding an aluminum lead wire to the metal plate by ultrasonic wave. CONSTITUTION:The metal plate 11 having a thickness of more than 300mum and plated with nickel for gloss on the surface and formed of copper or the like is soldered with a high temperature brazing metal 7a onto the main electrode 5a of the semiconductor pellet 1 formed on the ceramic substrate 9 through a heat sink plate 6, and the aluminum lead wire 3 is bonded by ultrasonic wave onto the plate 11. Thus, when the semiconductor device becomes ON state, no hot spot nor crack occurs on the main electrode and the semiconductor device having large and sufficient current capacity with a simple structure can be obtained. |
