| 摘要 |
PURPOSE:To improve the capacity of a breaking current by a method wherein a gate turn-off thyistor with a low proportional resistivity buried layer is provided with a relatively higher proportional resistant base layer between the low resistivity buried layer and a gate electrode in order to nullify the dispersion of the distribution of the resistance in the buried layer. CONSTITUTION:A low resistivity buried layer P2<++> is formed in the base region of a gate turn-off thyristor, and a base layer having relatively high resistivity for instance, about 5OMEGAcm, is placed between a gate electrode 2 and the low resistivity buried layer to attach the gate electrode to the region. By so doing, the dispersion of the distribution of resistance within the surface of the buried layer is compensated, decreasing the concentration of the current due to the structural dispersion in the buried layer. This improves the capacity of the breaking current. |
