| 摘要 |
PURPOSE:To improve the flatness of a surface and increase the conversion efficiency of a solar cell in the case of a solar cell formed by depositing an amorphous semiconductor film on a substrate by making the minimum radius of curvature of the unevenness of the substrate surface three times or more the thickness of the deposited semicondutor film. CONSTITUTION:Glow discharges are generated in a reaction chamber where monosilane gas flows, and silicon generated by the decomposition of the gas is deposited in a film form on a substrate 1 of metal such as stainless steel, aluminum, molybdenum, etc., or glass, ceramic, etc., to form an amorphous silicon film 2. The thickness of this film may be about 1mu, while the flatness of the surface of the substrate is made to such an extent that the minimum radius of curvature of the unevenness of the surface is three times or more the thickness of the semiconductor film. By so doing, as the semiconductor film is formed following the uneveness of the surface, the short-circuiting of the solar cell can be prevented and the surface can be ground at the minimum necessary cost. |
