| 摘要 |
PURPOSE:To improve electric characteristics in a Schottky barrier diode which has a buried layer between a semiconductor substrate and an epitaxial layer by etching the epitaxial layer under electrodes so as to form one electrode on the buried layer and the other a little above the layer. CONSTITUTION:An N<+> buried layer 2, an N type epitaxial layer 3 and an insulating film 6 are formed on a P type silicon substrate 1. By etching the part of the epitaxial layer where an anode electrode 8 is to be formed to the extent that the buried layer may not be exposed, the anode electrode is formed. On the other hand, by etching the part of the epitaxial layer where a cathode electrode is to be formed to the extent that the buried layer may be exposed, the electrode is connected directly to the buried layer. In the case of a Schottky barrier diode of such a construction, its resistance can be reduced to 1/10 or less of conventional series resistance values and its current-voltage characteristic can be improved greatly. |
