| 摘要 |
PURPOSE:To increase the reliability of the semiconductor device by perforating a contact hole by utilizing a photosensitizer at the semiconductor substrate provided with a protective film, retaining the photosensitizer, evaporating the base metal, then removing the photosensitizer and retaining the base metal only in the contact hole. CONSTITUTION:The protective film formed of oxide films 2, 4 and a phosphorus glass film 6 is formed on the semiconductor substrate 1, the photosensitizer 7 is coated thereon, and contact holes 8 are perforated at the parts corresponding to source, drain and gate. The base conductors 11, 11' such as Si, Mo, Ti, V or the like are evaporated in the state that the photosensitizer 7 is retained, the photosensitizer 7 is removed to retain the base conductor only in the contact holes 8, and wire conductors are formed in a predetermined pattern to make contact therewith. Thus, since the protective film for covering the substrate is not eroded unevently, then protecting function is not lowered, but the semiconductor device having high reliability can be obtained. |
