| 摘要 |
PURPOSE:To efficiently measure an electrical characteristic at a junction part of each semiconductor element by a method wherein a measuring method the same as for the nonplanar type semiconductor element is adopted. CONSTITUTION:By using a both plane mask aligner, a specified part of a semiconductor substrate 6 is removed by means of a mesa etching, and each part of the semiconductor element is separated electrically. Each separated individual semiconductor element 16 is bonded to a flat plane 14 with a bonding agent 15. For each semiconductor element 16, both beam lead electrodes 12, 13 are not contacted with an epitaxial layer 7 and they are arranged in a matrix type and fixed to the flat plate 14, therefore, when a probe is sequentially contacted to both beam lead electrodes 12, 13 of each semiconductor element 16, an electrical characteristics of the junction part of each semiconductor element 16 can be measured in the same method as the measurement of a nonplanar semiconductor element. |
