发明名称 MANUFACTURE OF PROJECTED ELECTRODE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the lowering of contact strength by a method wherein the ground metal in a window part is pushed out partially, a positive resist is left under the metal and the ground metal is removed with the projected electrode and the positive resist being used as masks. CONSTITUTION:On a Cr film 4 covering the opening an Au projected electrode 2 is formed through the intermediary of a thin Au film 1. When the positive resist is applied and subjected to exposure and development, the resist 8 is kept under the pushed-out part of the electrode 2. Then, the Cr 4 is removed through etching with the electrode 2 and the resist 8 used as the mask. By this constitution, no lowering of contact strength, which is caused by lateral-side etching of the Cr film, takes place. In addition, the stages of process is not increased since the projected electrode itself is employed as the photomask.
申请公布号 JPS56100450(A) 申请公布日期 1981.08.12
申请号 JP19800001888 申请日期 1980.01.11
申请人 SEIKO INSTR & ELECTRONICS 发明人 KUHARA KENTAROU
分类号 H01L21/60;H01L23/485 主分类号 H01L21/60
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