| 摘要 |
Diode comprises at least one first region and one second region abutting to form a junction, the first region being made from an amorphous cpd. contg. Si and F, and pref. H, the cpd. having a compsn. SiaFbHc where a is 80-98%, b is 0-10% and c is 0-10%. The first region is pref. n-conductivity type doped with a dopant in an amt. of between a few ppm and 5 atom.% pref. P or As, and the second region is a metal, alloy or similar material forming a high barrier on the first region to produce a Schottky barrier. Pref. the metal of the second region is Au, Pt, Pd or Cr and/or alloys of Si and F. Also claimed are read only memory devices utilising these diodes. The diode exhibits a large no. of unsatd. bonds in the Si hence a reduced density of localised states in the band gap and corresp. improved electronic properties. |
