| 摘要 |
<p>PURPOSE:To obtain IC of high performance without any increase in the steps of process by providing two or more poly-Si layers having low specific resistance on an n layer on a P type substrate. CONSTITUTION:A channel stopper, a field oxidized film and a gate oxidized film are formed selectively on the P type Si substrate 11 and later covered with poly-Si 14. After surface oxidation, pattering is applied and the 1st poly-Si layer 15, a wiring 16 and a gate 17 are formed simultaneously. The surface oxidized film is removed, SiO2 18 is formed afresh, P diffusion is applied, and thus a wiring layer 19 and n layers 20 and 21 are provided. At this time, the layer resistance of poly-Si also lowers. Then, PSG is removed, covering with a thick oxidized film 22 is made, N<+> poly-Si is laminated and subjected to patterning, and thus the 2nd poly-Si layer 23 is formed on the poly-Si 15 and the 2nd wiring layer 24 on the wiring 16. After that, SiO225 is formed on the poly-Si 23 and electrode wiring is applied selectively. By this constitution, the wirings are made to cross each other freely without increase in the steps of process, whereby the latitude of design and the degree of integration can be improved together with large reduction of the resistance value of the wiring in a diffusion layer.</p> |
