发明名称 TESTING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To perform inspection with high precision and at high speed with complete noncontact manner by supplying a power actuating a semiconductor through irradiation of energy quantum such as an electron beam and an ion beam. CONSTITUTION:Electron beams 2 are applied only to a pad for power supply and a pad for signal input out of the electrode pads 4 of the semiconductor device 1 completed on a substrate, whereby a power and a signal are supplied. Since the semiconductor device comes into a state of operation under the condition, each part within a chip is scanned by the electron beams 3 for an electron microscope and thus the testing for the ordinary semiconductor device can be performed from the condition of potential of each part based on the difference in the efficiency of the secondary electron emission. Other energy quantum can also be applied in quite the same way. By this constitution, damage due to mechanical contact is eliminated completely and resolving power is high enough, and thus a single element can be inspected separately even in IC.
申请公布号 JPS56100439(A) 申请公布日期 1981.08.12
申请号 JP19800003883 申请日期 1980.01.16
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAKIDA HIDEKI
分类号 H01L21/66;G01R31/265;G01R31/302 主分类号 H01L21/66
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