| 摘要 |
PURPOSE:To complete recovery of crystallinity and ohmic contact by attaching electrode metal through selective addition of impurities and then by applying laser beams for heat treatment. CONSTITUTION:P ions are injected to a P type Si substrate 11 through the opening of SiO212. Then, poly-Si 15 and Mo 16 are laminated, whereby an electrode wiring pattern is prepared. When Ar ion laser beams are applied subsequently, Mo silicate 17 having a nonstoichimetrical composition is produced and the P ions injected turn active electrically, whereby an N layer 18 is formed. By this constitution, the rate of activation of impurities can be raised, while an electrode is fitted to the layer of impurities. |
