| 发明名称 |
MANUFACTURE OF INDEFINITE FORM SILICON SPUTTERED TO ADJUSTED MONOHYDROGENATED AND POLYHYDROGENATED BOND DENSITY |
| 摘要 |
<p>A reactively sputtered photoconductive amorphous silicon film having a controlled monohydride and polyhydride bond density is produced by applying a voltage bias to the film's substrate (14) during reactively sputtering a layer of amorphous silicon in a partial pressure of hydrogen.</p> |
| 申请公布号 |
JPS56100128(A) |
申请公布日期 |
1981.08.11 |
| 申请号 |
JP19800189497 |
申请日期 |
1980.12.29 |
| 申请人 |
EXXON RESEARCH ENGINEERING CO |
发明人 |
SHIODOORU DEII MASUTEIKASU |
| 分类号 |
C01B33/04;C23C14/00;C23C14/14;H01L21/205;H01L31/20 |
主分类号 |
C01B33/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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