| 摘要 |
PURPOSE:To obtain a semiconductor of III-V group compound having a uniformity and a poor crystal defect by controlling a whole gas pressure less than the atmospheric pressure adjacent to the substrate in case of a crystal growth of a semiconductor compound through a method of halogen transportion. CONSTITUTION:A semi-insulating GaAs substrate 3 is placed on a stand 2 keep a H2 gas at 0.5 atmospheric pressure. Keeping a Ga source saturated with As and the substrate 3 at 850 deg.C and 750 deg. respectively, H2 gases 4 and 5 including AsCl3 are introduced (into a reaction tube) changing the H2 concentration to form the GaAs having a high resistance opitaxially. Then, the n<+> GaAs is laminated by exchanging the whole introducing gas to a gas including a H2S and at least the growth is stopped by exchanging the whole introducing gas to a H2. When the whole gas pressure adjacent to the substrate is made to be less the atmospheric pressure as such, an epitaxial layer having an uniform film thickness and carrier concentration which are impracticable in the conventional method, can be obtained.
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