| 摘要 |
PURPOSE:To obtain the transistor with gates with highly efficient use of the emitter, by arranging the gates as the islands, making the dimension of the gates smaller and making the effective emitter dimension per unit dimension greater. CONSTITUTION:The transistor with gates is constituted by the island gates 2, the emitters 4 and the bases 3 formed all over. In this formation, the following inequality must be sufficed : a<(NB/NC)WBcot(pi/4+theta/2), whereby 2a being the distance between each gate region with the main current path in-between, NC being the impurity concentration in the collector region, NB being the impurity concentration in the base region, WB being the width of the base region and the theta being the angle formed by the normal line of the 1st junction and the 3rd junction face. At the same time, the gate region is so aligned that when assuming the gate region as a circle with diameter alpha, this region is surrounded by the other regions situated at one point of the equilateral triange with the said region as a center and with each side being 3<0.5>(a+alpha/2). That is to say, if the island 8 is randomly selected as the center, the neighboring other islands gates with the same distance from the said gate are so aligned that the islands 9-14 are six in number. |
