| 摘要 |
PURPOSE:To facilitate the structure of the optical integrated circuit, by forming the optical resonator vertically on the surface of the semiconductor wafer. CONSTITUTION:On the N type InP substrate 1, the N type InP layer 2, the active layer 3 consisting of GaInAs intermetallic compound and the P type InP layer 4 are stacked and grown. The whole surface is convered with SiO2 film 5. The cylindrical holes are made into the film 5, and the reverse side of the substrate 1 is polished to the required thickness and made into the mirror surface 6. On the whole surface of the film 5 including the holes the electrode 7 made of Au-Zn alloy is adhered and on the mirror surface 6 the electrodes 8 made of Au-Sn alloy are adhered that face the both side of holes of the film 6. On the whole surface of the electrode 8 side, the Au layer 9 is formed. Next, the substrate 9 is cut so that each pellet 10 has one hole and two electrodes respectively. Thus the laser beam that emits from the active layer is subjected to convergence, amplification and reflection repeatedly between the electrodes on the reflection surfaces and emit vertically to the reflection surface. |
