发明名称
摘要 A semiconductive device and a method for producing the semiconductive device, wherein random defects or inaccuracies in precise registrations of certain patterns are compensated by the introduction of selected impurities. The selected impurities bring about changes in the electrical characteristics of those portions of the semiconductor affected by the random defects or registration inaccuracies so as to prevent them from causing malfunctions in the completed devices.
申请公布号 JPS5634100(B2) 申请公布日期 1981.08.07
申请号 JP19760049349 申请日期 1976.04.28
申请人 发明人
分类号 H01L29/78;H01L21/00;H01L21/265;H01L21/3205;H01L21/336;H01L21/8246;H01L23/52;H01L27/112;H01L29/00 主分类号 H01L29/78
代理机构 代理人
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