| 摘要 |
PURPOSE:To process the edge section of a stripe type transparent conductive film into a taper form with an acute angle, by providing a slant area on the end of a mask pattern and processing the transparent conductive film by means of sputter etching in ambience of inactive gas. CONSTITUTION:A mask pattern 7 with a gradual taper is formed on the sample thin film 6 on a substrate 1. Since the mask pattern itself is etched, in sputter etching, the pattern edge section of the sample thin film 6 is also tapered. Therefore, the crossectional shape control of the transparent conductive film can be performed by controlling that of the mask pattern and the sputter etching speed ratio of the mask material and the transparent conductive film. |
