| 摘要 |
PURPOSE:To obtain the photoelectric converter with a simple structure by providing the first semiconductor on a substrate, and stacking the second semiconductor with a broad energy band to which the same material or O2, N2, and C are further added. CONSTITUTION:On the glass substrate, are provided the first layer with the 1.2- 1.8ev energy bandwidth whose main component is SiH4 and to which 1-10mol% N, C, and O are added with NH3, N2O, and CH4 as necessary, by using the plasma CVD method at 0-500 deg.C. The second layer is provided to expand by 0.5-2ev by adding 5-50mol% N, C, and O. The second layer becomes actually an intrinsic semiconductor. The thickness of the second layer is 1/3-1/20 the thickness of the first layer. The second layer is etched in a bevelled shape, covered by SiO2 4, and perforated. A P layer 9 and an N layer 10 are selectively provided, Al electrodes 14 and 15 are provided, and external connecting terminals 16 and 17 are attached. In this constitution, the materials are inexpensive, and easy to machine. A plurality of devices can be integrated and arranged in series or in parallel. |
