| 摘要 |
PURPOSE:To obtain the LED wafer by using a vertical furnace with a specified temperature gradient, using especially a rare earth element as a solvent, keeping the condition of the interface between a liquid phase and a solid phase, estabilishing a thickness, maintaining the solute source on the solution so that the solute source is not drained, thereby forming an ingot. CONSTITUTION:The temperature gradient is given to the SiC+Sc solution 4 under the state solute source SiC powder 5 is floated, and an SiC crystal 6 is formed from the bottom of a crucible 3. Al is added to the solution to obtain the P type. A reacting tube 1 is heated by flowing inactive gas, a specified temperature gradient is maintained in the solution 4. In the vicinity of the interface between the liquid and solid phases, the gradient is 25 deg.C/cm. A coil and the crucible are relatively moved with about 1,800 deg.C being maintained. During this period, the SiC which floats on the surface of the solution is gradually resolved, and the growing is continued under the same condition. The SiC powder is finished to the solubility which is higher than that of the solvent metal. A wafer is cut out from the ingot obtained, and one surface thereof is contacted with Si solution containing C, and N epitaxial layer is layered in N2. Then, a bright, blue LED can be obtained without the effects of the rare earth metal element in the solvent. |
