| 摘要 |
PURPOSE:To eliminate the leakage of the microwave in the microwave plasma treating device by winding metal units on the led parts of an exhaust tube and a gas supply tube when a treating chamber is contained in a cavity chamber and both the tubes provided at the chamber are passed through the cavity chamber to be thus externally led. CONSTITUTION:The quartz treating chamber 1 having a cover plate 4 accommodating a semiconductor wafer 5 to be treated is arranged in the cavity chamber 6 provided with a microwave antenna 7 at a ceiling, and the exhaust tube 2 and the gas supply tube 3 projected at both sides of the treating chamber 1 are passed through the wall of the cavity chamber 6 to be externally led. Thus, the device is constructed, the microwave from a microwave generator separately provided is fed through the antenna 7 into the cavity chamber 6, a gas plasma is thus produced in the treating chamber 1, and the wafer 5 is etched. In this configuration magnets 8 and 9 are engaged with the lead parts of the tubes 2 and 3 to prevent the leakage of the microwave from the tube passing parts. Or aluminum foils having a length of integer times of the 1/4 of the wavelength of the microwave may be wound on the tubes. |
